q Complementary pair with 2SC1317 and 2SC1318.
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
13.5±0.5
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SA719.
30
base voltage 2SA720
VCBO.
60
V
Collector to 2SA719.
25
VCEO
V
emitter voltage 2SA720.
50
Emitter to base voltage
VEBO.
5
V
Peak collector current
ICP.
1
A
Collector current
IC.
500
mA
Collector power dissipation PC
625
mW
Junct.
Transistor
2SA719, 2SA720
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318
s Features
q Complementary pair with 2SC1317 and 2SC1318.
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
13.5±0.5
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SA719
–30
base voltage 2SA720
VCBO
–60
V
Collector to 2SA719
–25
VCEO
V
emitter voltage 2SA720
–50
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1
A
Collector current
IC
–500
mA
Collector power dissipation PC
625
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
2.3±0.2
123 2.54±0.