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B1148 - 2SB1148

Key Features

  • q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB1148 base voltage 2SB1148A VCBO.
  • 40.
  • 50 V Collector to 2SB1148 emitter voltage 2SB1148A VCEO.
  • 20.
  • 40 V Emitter to base voltage Peak collector current Collector c.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 3.0±0.2 Unit: mm 3.5±0.2 7.2±0.3 0.8±0.2 s Features q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.