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Power Transistors
2SB1393, 2SB1393A
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD1985 and 2SD1985A
s Features
q Satisfactory linearity of foward current transfer ratio hFE q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1393 base voltage 2SB1393A
VCBO
–60 –80
V
Collector to 2SB1393 emitter voltage 2SB1393A
VCEO
–60 –80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO ICP IC
PC
–5 –5 –3 25 2.