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Transistors
2SB1462L
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SD2216L
32
Unit: mm
0.020±0.010
0.80±0.05
I Features
• High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature
VCBO VCEO VEBO ICP
IC PC Tj Tstg
−60 −50 −7 −200 −100 150 125 −55 to +125
Note) *: Printed circuit board copper foil for collector portion area: 20.0 mm2 or more, thickness: 1.6 mm
Unit V V V mA mA
mW °C °C
0.
B1462L Datasheet