q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <.
2.5V
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC.
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Power Transistors
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2276
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3
3.0
2.0 4.0 2.0 3.0
10.0 6.0
s Features
q Optimum for 110W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
–160 –140 –5 –12 –7 120 3.5
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
26.0±0.5
1.5
1.5
20.0±0.5 2.5
Solder Dip
2.0±0.3 3.0±0.
B1503 Datasheet
