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B1645 - 2SB1645

Key Features

  • Satisfactory forward current transfer ratio hFE characteristics.
  • Wide area of safe operation (ASO).
  • Optimum for the output stage of a HiFi audio amplifier I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC = 25°C dissipation Ta = 25°C Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg.

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Power Transistors 2SB1645 Silicon PNP triple diffusion planar type Darlington For power amplification I Features • Satisfactory forward current transfer ratio hFE characteristics • Wide area of safe operation (ASO) • Optimum for the output stage of a HiFi audio amplifier I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC = 25°C dissipation Ta = 25°C Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg −160 −160 −5 −15 −8 100 3 150 −55 to +150 Unit V V V A A W °C °C Unit: mm 15.5±0.5 φ 3.2±0.1 5° 3.0±0.3 5° (4.5) (23.4) 22.0±0.5 26.5±0.5 (2.0) (1.2) (10.0) 18.6±0.5 (2.0) Solder Dip (4.0) 2.0±0.