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C5243 - 2SC5243

Key Features

  • q q q 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current www. DataSheet4U. com 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 1700 1700 6 15 30 10 200 3.5 150.
  • 55 to +150 Unit V V V A A A W ˚C ˚C 2.7±0.3 Symbol VCBO VCES VEBO IC ICP.
  • IBP PC Tj Tstg 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP.
  • 3L Package Peak base.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC5243 Silicon NPN triple diffusion mesa type For horizontal deflection output 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current www.DataSheet4U.com 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 1700 1700 6 15 30 10 200 3.5 150 –55 to +150 Unit V V V A A A W ˚C ˚C 2.7±0.3 Symbol VCBO VCES VEBO IC ICP* IBP PC Tj Tstg 0.6±0.2 5.45±0.3 10.9±0.