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C5418 - 2SC5418

Key Features

  • φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.4 22.0±0.5 q Wide area of safe operation (ASO) 5° 5° 4.0 / s Absolute Maximum Ratings (TC=25˚C) 2.0±0.2 5° 1.1±0.1 e ) Parameter Symbol Ratings Unit 2.0 18.6±0.5 c type Collector to base voltage VCBO 1700 V n d stage. tinued Collector to emitter voltage VCES 3.3±0.3 0.7±0.1 1700 V le n VCEO 600 V a elifec.

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Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 3.0±0.3 s Features φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.4 22.0±0.5 q Wide area of safe operation (ASO) 5° 5° 4.0 / s Absolute Maximum Ratings (TC=25˚C) 2.0±0.2 5° 1.1±0.1 e ) Parameter Symbol Ratings Unit 2.0 18.6±0.5 c type Collector to base voltage VCBO 1700 V n d stage. tinued Collector to emitter voltage VCES 3.3±0.3 0.7±0.1 1700 V le n VCEO 600 V a elifecyc disco Emitter to base voltage VEBO 2.0 5.5±0.