C5591 Description
Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit:.
C5591 Key Features
- High breakdown voltage: 1 700 V; supporting a large screen CRT
- High-speed switching: Fall time tf < 0.2 µs
- Low collector-emitter saturation voltage: Collector-emitter satura
- Wide safe operation area