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C5622 - 2SC5622

Datasheet Summary

Features

  • High breakdown voltage: 1 500 V.
  • High-speed switching.
  • Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector to base voltage VCBO 1 500 V 18.6±0.5 (2.0) Solder Dip 5.45±0.3 10.9±0.5 5.5±0.3 3.3±0.3 (2.0) MaDinistecnoanntincueed ICEPCBCdJSCEFCBTuioetrmmooaoaooEsonaarlssllllslrwiinclkllleeleittaeeeeetspttcagcictcceeccitaoocrtttoorrtetuidtoooonotrlire.

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Datasheet preview – C5622

Datasheet Details

Part number C5622
Manufacturer Panasonic Semiconductor
File Size 179.37 KB
Description 2SC5622
Datasheet download datasheet C5622 Datasheet
Additional preview pages of the C5622 datasheet.

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Full PDF Text Transcription

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Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 φ 3.2±0.1 Unit: mm 3.0±0.3 5˚ 5˚ (4.5) (23.4) 22.0±0.5 26.5±0.5 (2.0) (1.2) (10.0) I Features • High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit 5˚ (4.0) 5˚ 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 / Collector to base voltage VCBO 1 500 V 18.6±0.5 (2.0) Solder Dip 5.45±0.3 10.9±0.5 5.5±0.3 3.3±0.3 (2.
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