Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
13.7-+00..25 2.0±0.2 4.1±0.2
Solder Dip
0.76±0.06 1.45±0.15
1.2±0.15
0.75±0.1
1.25±0.1 2.6±0.1
0.7±0.1
e Collector-base voltage (Emitter open) VCBO
1 500
V
pe) Collector-emitter voltage (E-B short) VCES
1 500
V
nc d ge. ed ty Emitter.
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Power Transistors
2SC5884
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
Unit: mm
3.0±0.2
■ Features
9.9±0.3
4.6±0.2 2.9±0.2
15.0±0.3 8.0±0.2 1.0±0.1
• High breakdown voltage: VCBO ≥ 1 500 V • Wide safe operation area
φ3.2±0.1
• Built-in dumper diode
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
13.7-+00..25 2.0±0.2 4.1±0.2
Solder Dip
0.76±0.06 1.45±0.15
1.2±0.15
0.75±0.1
1.25±0.1 2.6±0.1
0.7±0.1
e Collector-base voltage (Emitter open) VCBO
1 500
V
pe) Collector-emitter voltage (E-B short) VCES
1 500
V
nc d ge.
C5884 Datasheet
