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C5902 - 2SC5902

Key Features

  • s 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5.
  • High breakdown voltage: VCBO ≥ 1 700 V.
  • Wide safe operation area.
  • Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚.
  • Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 700 V pe) Collector-emitter voltage (E-B short) VCES 1 700 V nc d ge. ed ty Em.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm ■ Features 15.5±0.5 φ 3.2±0.1 5˚ 3.0±0.3 5˚ (4.5) 26.5±0.5 (2.0) (1.2) (10.0) (23.4) 22.0±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 5˚ (4.0) 5˚ 2.0±0.2 5˚ ■ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 / Parameter Symbol Rating Unit 18.6±0.5 (2.0) Solder Dip 5.45±0.3 e Collector-base voltage (Emitter open) VCBO 1 700 V pe) Collector-emitter voltage (E-B short) VCES 1 700 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 7 3.3±0.3 (2.0) 5.5±0.