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D1457 - 2SD1457

Key Features

  • q q q 16.2±0.5 12.5 3.5 Solder Dip High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 150 200 5 10 6 60 3 150.
  • 55 to +150 Unit V 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1457 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 emitter voltage 2SD1457.

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Full PDF Text Transcription (Reference)

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Power Transistors 2SD1457, 2SD1457A Silicon NPN triple diffusion planar type Darlington For power amplification 15.0±0.3 11.0±0.2 www.DataSheet4U.com Unit: mm 5.0±0.2 3.2 s Features q q q 16.2±0.5 12.5 3.5 Solder Dip High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 150 200 5 10 6 60 3 150 –55 to +150 Unit V 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1457 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.1±0.1 5.45±0.3 10.9±0.