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Power Transistors
2SD1893
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1253
s Features
q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO VCEO VEBO ICP IC
PC
Tj Tstg
130 110
5 10 6 50 3 150 –55 to +150
Unit V V V A A
W
˚C ˚C
12.5 3.5 15.0±0.2 0.7
15.0±0.3 11.0±0.2
φ3.2±0.
D1893 Datasheet
