Overview: Transistor 2SD1991A
Silicon NPN epitaxial planer type
For general amplification plementary to 2SB1320A
6.9±0.1 Unit: mm
1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q 0.45–0.05
0.45–0.05 +0.1 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C)
1 2.5±0.5 2 2.5±0.5 3 60 50 7 200 100 400 150 –55 ~ +150 V V V mA mA mW ˚C ˚C
1.2±0.1 0.65 max.
0.1 0.45+ – 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 2.5±0.1 Ratings Unit +0.1 (HW type) s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*h (Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob
* Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = –2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 1 1 14.5±0.5 0.85 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 1.0 3.5±0.
