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D2137 - 2SD2137

Key Features

  • q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 s Absolute Maximum Ratings Parameter Collector to www. DataSheet4U. com base voltage Collector to 2SD2137 2SD2137A 2SD2137 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 60 80 60 80 6 5 3 15 2 150.
  • 55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 s Absolute Maximum Ratings Parameter Collector to www.DataSheet4U.com base voltage Collector to 2SD2137 2SD2137A 2SD2137 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings 60 80 60 80 6 5 3 15 2 150 –55 to +150 Unit V 90° 2.5±0.2 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.