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D2222 - 2SD2222

Datasheet Summary

Features

  • q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 160 160 5 15 8 150 3.5 150.
  • 55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 A W ˚C ˚C 1:Base 2:.

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Datasheet Details

Part number D2222
Manufacturer Panasonic Semiconductor
File Size 90.85 KB
Description 2SD2222
Datasheet download datasheet D2222 Datasheet
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Full PDF Text Transcription

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Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1470 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 20.0±0.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 (TC=25˚C) Ratings 160 160 5 15 8 150 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C B E s Electrical Characteristics www.DataSheet4U.
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