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D2359 - 2SD2359

Key Features

  • 2.6±0.1 0.4max. q q Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 45° 1.0.
  • 0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0.
  • 0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.5±0.1 4.5±0.1 1.6±0.2 s Features 2.6±0.1 0.4max. q q Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 3 2 1 (Ta=25˚C) Ratings 20 20 5 1.