Low collector-emitter saturation voltage VCE(sat).
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current.
Base current
Collector power dissipation
TC = 25°C
VCBO VCEO VEBO
IC ICP IB PC
80 60 6 2 4 1 10 1
Junction temperature Storage temperature
Tj 150 T.
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Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
For high current transfer ratio and power amplification
■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Base current
Collector power dissipation
TC = 25°C
VCBO VCEO VEBO
IC ICP IB PC
80 60 6 2 4 1 10 1
Junction temperature Storage temperature
Tj 150 Tstg −55 to +150
Note) Non-repetitive peak collector current
Unit V V V A A A W
°C °C
6.5±0.1 5.3±0.1 4.35±0.1
Unit: mm 2.3±0.1
0.5±0.1
7.3±0.1 1.8±0.1
0.8 max.
1.0±0.2
2.5±0.1
4.6±0.
D2453 Datasheet
