DA26101 Description
Tentative DA26101 Silicon epitaxial planar type For high speed switching circuits Marking Symbol : ML2-N3-B Ratings Ta = 25 °C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current 1 Junction temperature Storage temperature Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.