0.1
s Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6.
4 45 3 200 150.
55 to +150 Unit V V mA mA mW ˚C ˚C
1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin)
s Equivalent Circuit.
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GaAs MMICs
GN1010
GN1010
GaAs N-Channel MES IC
For high-output high-gain amplification
0.65±0.15
Unit : mm
2.8 –0.3
+0.2 +0.2
1.5 –0.3
0.65±0.15
s Features
0.95
q q q
General-use wide-band amplifier
2.9±0.2
0.5R
1.9±0.2
4
1
0.95
Low noise With bandwidth control pin
3
2
1.1 –0.1
s Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6 –4 45 3 200 150 – 55 to +150 Unit V V mA mA mW ˚C ˚C
1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin)
s Equivalent Circuit
2 3 4
0 to 0.1
0.4±0.2
0.
GN1010 Datasheet
