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GN1010 - GaAs N-Channel MES IC

Features

  • 0.95 q q q General-use wide-band amplifier 2.9±0.2 0.5R 1.9±0.2 4 1 0.95 Low noise With bandwidth control pin 3 2 1.1.
  • 0.1 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6.
  • 4 45 3 200 150.
  • 55 to +150 Unit V V mA mA mW ˚C ˚C 1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin) s Equivalent Circuit.

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Datasheet Details

Part number GN1010
Manufacturer Panasonic
File Size 39.04 KB
Description GaAs N-Channel MES IC
Datasheet download datasheet GN1010 Datasheet
Additional preview pages of the GN1010 datasheet.

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    Full PDF Text Transcription

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    GaAs MMICs GN1010 GN1010 GaAs N-Channel MES IC For high-output high-gain amplification 0.65±0.15 Unit : mm 2.8 –0.3 +0.2 +0.2 1.5 –0.3 0.65±0.15 s Features 0.95 q q q General-use wide-band amplifier 2.9±0.2 0.5R 1.9±0.2 4 1 0.95 Low noise With bandwidth control pin 3 2 1.1 –0.1 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6 –4 45 3 200 150 – 55 to +150 Unit V V mA mA mW ˚C ˚C 1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin) s Equivalent Circuit 2 3 4 0 to 0.1 0.4±0.2 0.
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