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GN8061 - GaAs IC

Features

  • q q q 1 2 3 4 6.4±0.2 8 7 6 5 Unit : mm High output Pulse current and DC bias current can be controlled. 10max. 2.54±0.25 High-speed switching 0.7min. 4.5max. 4.0max. s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Symbol VDD VSS VIb1.
  • 1 VIb2 Pin voltage VIN VIp.
  • 5 Rating 6.
  • 6 6 0.5.
  • 0.5 to VDD.
  • 1.5 1.5 to 6 6 55 40 225 700 150.
  • 55 to +150.
  • 10 to + 75 Unit V V 0 to 15˚ 7.62±0.2 V V V V V mA mA mA mW ˚C ˚C ˚C 1 : GN.

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GaAs MMICs GN8061 GN8061 GaAs IC For semiconductor laser drive s Features q q q 1 2 3 4 6.4±0.2 8 7 6 5 Unit : mm High output Pulse current and DC bias current can be controlled. 10max. 2.54±0.25 High-speed switching 0.7min. 4.5max. 4.0max. s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Symbol VDD VSS VIb1* 1 VIb2 Pin voltage VIN VIp *5 Rating 6 –6 6 0.5 – 0.5 to VDD –1.5 1.5 to 6 6 55 40 225 700 150 – 55 to +150 –10 to + 75 Unit V V 0 to 15˚ 7.62±0.2 V V V V V mA mA mA mW ˚C ˚C ˚C 1 : GND 2 : VIb1 3 : VIb2 0.35max.
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