q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
s.
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Power F-MOS FETs
2SK3023 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage VDSS 60 V
Gate to Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID IDP
±10 A ±20 A
Avalanche energy capacity
EAS*
5
mJ
Allowable power dissipation
TC = 25°C Ta = 25°C PD
10 W
1
Channel temperature Storage temperature
Tch 150 °C
Tstg
−55 to +150
°C
* L = 0.
K3023 Datasheet