The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power F-MOS FETs
2SK3048
www.DataSheet4U.com Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
9.9±0.3 4.6±0.2 2.9±0.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2
1.4±0.2 1.6±0.2 0.8±0.1
3.0±0.5
2.6±0.1
0.55±0.15
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 ±30 ±3 ±6 22.5 35 2 150 −55 to +150 Unit V V A A mJ W °C °C
1 2
2.54±0.3 3 5.08±0.
K3048 Datasheet
