K664 - 2SK664

Features

q High-speed switching q S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. 2.0±0.2 1.3±0.1 0.65 0.65 unit: mm 0.425 2.1±0.1 1.25±0.1 0.425 0.3.
+00.1 1 3 2 0.9±0.1 0.7±0.1 0.2 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg.

Panasonic Semiconductor

Datasheet Details

Part number	K664
Manufacturer	Panasonic Semiconductor
File Size	34.38 KB
Description	2SK664
Datasheet	K664 Datasheet
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Silicon MOS FETs (Small Signal) 2SK664 Silicon N-Channel MOS FET For switching s Features q High-speed switching q S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. 2.0±0.2 1.3±0.1 0.65 0.65 unit: mm 0.425 2.1±0.1 1.25±0.1 0.425 0.3–+00.1 1 3 2 0.9±0.1 0.7±0.1 0.2 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C 0.2±0.1 1: Gate 2: Source 3: Drain EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 3N Internal Connection D G 0 to 0.1 0.15–+00..

Published: Jan 26, 2015 |