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LN151F - GaAs Infrared Light Emitting Diodes

Key Features

  • High-power output, high-efficiency : PO = 7.5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ. ) LN151F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package 2 1 ø5.75 ma.

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Datasheet Details

Part number LN151F
Manufacturer Panasonic
File Size 40.94 KB
Description GaAs Infrared Light Emitting Diodes
Datasheet download datasheet LN151F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Infrared Light Emitting Diodes LN151F, LN151L GaAs Infrared Light Emitting Diodes For optical control systems Features High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.) LN151F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package 2 1 ø5.75 max.