LN162S Datasheet | Panasonic

Features High-power output, high-efficiency : PO = 3.5 m W (typ.) Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small ceramic package 3.75±0.3 2.0±0.2 12.5 min. ø3.0±0.15 ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) 1 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward Current Reverse voltage (DC) Operating ambient temperature Storage temperature - Symbol PD IF IFP- VR Topr Tstg Ratings 75 50 1 3 - 25 to +85 - 30 to +100 Unit m W m A A V ˚C ˚C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50m A IF = 50m A IF = 50m A IF = 50m A VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 1.5 typ 3.5 950 50 1.2 50 80 max Unit m W nm nm 1.5 10 V µA p F deg. Infrared Light Emitting Diodes - Ta 60 10 2 - Duty cycle 80 Ta = 25˚C 70 - VF Ta = 25˚C IF (m A) IFP (A) IF (m A) Forward current - 1 1 10 10 2 60 50 40 30 20 10 Allowable forward...