LN175 - GaAlAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LN175
Manufacturer	Panasonic Semiconductor
File Size	42.41 KB
Description	GaAlAs Infrared Light Emitting Diode
Datasheet	LN175 Datasheet
Additional preview pages of the LN175 datasheet.

High-power output, high-efficiency : PO = 12 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ. ) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ. ) 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 2-1.2±0.3 2-0.45±0.15 0.45±0.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambien.

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Published: Mar 22, 2005 |