Datasheet Summary
Infrared Light Emitting Diodes
GaAlAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.5±0.2
Features
High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.)
3.9±0.25
4.5±0.15 3.5±0.15
2.1±0.15 1.6±0.15 0.8±0.1
12.8 min.
(2.95)
2-1.2±0.3 2-0.45±0.15 0.45±0.15 1 2.54...