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LN189S - GaAlAs Infrared Light Emitting Diode

Key Features

  • High-power output, high-efficiency : PO = 5.5 mW (typ. ) Fast response and high-speed modulation capability : tr, tf =20 ns (typ. ) Infrared light emission close to monochromatic light : λP = 880 nm(typ. ) Narrow direcivity using spherical lenses; works well with optical systems in auto focus systems , , , 2 3.2±0.15 0.1 max. 1.0 0.6±0.1 0.3 0.2 Spherical lens ø0.4±0.03 0.6±0.1 0.5±0.1 0.15 1.5±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse f.

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Datasheet Details

Part number LN189S
Manufacturer Panasonic
File Size 44.03 KB
Description GaAlAs Infrared Light Emitting Diode
Datasheet download datasheet LN189S Datasheet

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Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 1 0.4±0.1 Features High-power output, high-efficiency : PO = 5.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) Infrared light emission close to monochromatic light : λP = 880 nm(typ.) Narrow direcivity using spherical lenses; works well with optical systems in auto focus systems , , , 2 3.2±0.15 0.1 max. 1.0 0.6±0.1 0.3 0.2 Spherical lens ø0.4±0.03 0.6±0.1 0.5±0.1 0.15 1.5±0.