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LN51F - GaAs Infrared Light Emitting Diodes

Features

  • High-power output, high-efficiency : PO = 6 mW (typ. ) Fast response : tr, tf = 1 µs (typ. ) Infrared light emission close to monochromatic light : λP =950 nm (typ. ) Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L) Wide directivity, matched for external optical systems : θ = 32 deg. (LN51F) TO-18 standard type package 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± 2 1 ø5.75 max. 1: Cathode 2: Anode LN51L ø4.6±0.15 Glass lens Unit : mm Absolute Maximum Ratings (Ta = 25˚C.

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Datasheet Details

Part number LN51F
Manufacturer Panasonic
File Size 45.51 KB
Description GaAs Infrared Light Emitting Diodes
Datasheet download datasheet LN51F Datasheet
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Infrared Light Emitting Diodes LN51F, LN51L GaAs Infrared Light Emitting Diodes For optical control systems LN51F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 Features High-power output, high-efficiency : PO = 6 mW (typ.) Fast response : tr, tf = 1 µs (typ.) Infrared light emission close to monochromatic light : λP =950 nm (typ.) Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L) Wide directivity, matched for external optical systems : θ = 32 deg. (LN51F) TO-18 standard type package 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± 2 1 ø5.75 max. 1: Cathode 2: Anode LN51L ø4.6±0.
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