Datasheet Summary
Infrared Light Emitting Diodes
LN51F, LN51L
GaAs Infrared Light Emitting Diodes
For optical control systems
LN51F
ø4.6±0.15
Unit : mm
Glass window
12.7 min.
4.5±0.2
2-ø0.45±0.05 2.54±0.25
Features
High-power output, high-efficiency : PO = 6 mW (typ.) Fast response : tr, tf = 1 µs (typ.) Infrared light emission close to monochromatic light : λP =950 nm (typ.) Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L) Wide directivity, matched for external optical systems : θ = 32 deg. (LN51F) TO-18 standard type package
2 0. 0± 1. 1. 0± 0. 15
3˚ 45±
2 1
ø5.75 max.
1: Cathode 2: Anode
ø4.6±0.15 Glass lens
Unit :...