Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
ø2.2
3.9±0.3 2.4 1.5
4.5±0.3
Features
High-power output, high-efficiency : PO = 4.6 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small size, thin side-view type package
2.9±0.25 1.2 1.7±0.2 0.9 0.8
12.8 min.
2-1.2±0.3 2-0.45±0.15 0.45±0.15 2.54...