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LN55 - GaAs Infrared Light Emitting Diode

Datasheet Summary

Features

  • High-power output, high-efficiency : PO = 3.5 mW (typ. ) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) High-speed modulation capability 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
  • Symbol PD IF.

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Datasheet Details

Part number LN55
Manufacturer Panasonic Semiconductor
File Size 38.03 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LN55 Datasheet
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Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW (typ.) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) High-speed modulation capability 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 75 50 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 1 R1.75 2.54 Not soldered ø3.5±0.2 4.2±0.3 2.3 1.9 1.
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