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LN671 Datasheet GaAlAs Infrared Light Emitting Diode

Manufacturer: Panasonic

Overview: Infrared Light Emitting Diodes LN671 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems 4 5.3 max. 5.0±0.1 2.54±0.1 3 1.0±0.1 Unit : mm 1.8±0.3 0.8±0.

Key Features

  • High-power output, high-efficiency : PO = 10 mW (typ. ) Fast response and high-speed modulation capability : tr, tf = 30 ns(typ. ) Small plastic package Epin ø3.2 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3 4-0.6 +0.1.
  • 0.2 1.0±0.1 4.3 max. 0.2 +0.1.
  • 0.05 4-0.5±0.15 1 10˚ 2 10˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
  • 5˚ Symbol PD IF IFP.

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