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MA190 - Switching Diodes

Key Features

  • Low forward dynamic resistance rf.
  • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current.
  • VR VRRM IF(AV) IFRM IFSM 35 35 100 225 500 Junction temperature Storage temperature Tj 200 Tstg.
  • 55 to +200 Note).
  • : t = 1 s Unit V V mA mA mA °C °C φ 0.56 max.

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Other Datasheets by Panasonic

Part Number Description
MA198 Silicon epitaxial planar type

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes MA2B190 (MA190) Silicon epitaxial planar type For switching circuits I Features • Low forward dynamic resistance rf • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* VR VRRM IF(AV) IFRM IFSM 35 35 100 225 500 Junction temperature Storage temperature Tj 200 Tstg −55 to +200 Note) * : t = 1 s Unit V V mA mA mA °C °C φ 0.56 max. COLORED BAND INDICATES CATHODE 1 Unit : mm 24 min. 1st Band 2nd Band 4.5 max. 24 min. 2 φ 1.95 max.