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Variable Capacitance Diodes
MA26V04
Silicon epitaxial planar type
Unit: mm
For VCO ■ Features
• Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD
1.00±0.05
0.60±0.05
3
2
1
0.39+0.01 −0.03
0.25±0.05
0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C
0.25±0.05 1
3 0.65±0.01
2 0.05±0.03
1: Anode 2: N.C. 3: Cathode ML3-N2 Package
Marking Symbol: 2H
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Diode capacitance Series resistance * Symbol IR CD1V CD3V rD VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 3 V, f = 470 MHz 10.0 5.8 Conditions Min Typ Max 10 11.1 6.4 0.
MA26V04 Datasheet
