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Variable Capacitance Diodes
MA26V15
Silicon epitaxial planar type
Unit: mm
For VCO ■ Features
• Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance
1 1.00±0.05
0.60±0.05
3
2
0.39+0.01 −0.03
0.25±0.05
0.50±0.05
0.25±0.05 1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C
3 0.65±0.01
2 0.05±0.03
1: Anode 2: N.C. 3: Cathode ML3-N2 Package
Marking Symbol: 2N
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Diode capacitance Symbol IR CD(0.5V) CD(2.5V) Capacitance ratio Series resistance
*
Conditions VR = 5 V VR = 0.5 V, f = 1 MHz VR = 2.
MA26V15 Datasheet
