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MA26V15 - Variable Capacitance Diodes

Features

  • s.
  • Good linearity and large capacitance-ratio in CD.
  • VR relation.
  • Small series resistance rD.
  • High frequency type by this low capacitance 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01.
  • 0.03 0.25±0.05 0.50±0.05 0.25±0.05 1.
  • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125.
  • 55 to +125 Unit V °C °C 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N. C. 3: Cathode ML3-N2 Pack.

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Datasheet Details

Part number MA26V15
Manufacturer Panasonic Semiconductor
File Size 93.27 KB
Description Variable Capacitance Diodes
Datasheet download datasheet MA26V15 Datasheet
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www.DataSheet4U.com Variable Capacitance Diodes MA26V15 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 2N ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD(0.5V) CD(2.5V) Capacitance ratio Series resistance * Conditions VR = 5 V VR = 0.5 V, f = 1 MHz VR = 2.
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