Low forward voltage: VF < 0.42 V (at IF = 100 mA).
Optimum for high frequency rectification because of its short reverse recovery time trr . 0.27+0.05.
0.02 1 1.00±0.05 1.40±0.05
0.12+0.05.
0.02
2.
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky Barrier Diodes (SBD)
MA27D29
Silicon epitaxial planar type
Unit: mm
For super high speed switching ■ Features
• Low forward voltage: VF < 0.42 V (at IF = 100 mA) • Optimum for high frequency rectification because of its short reverse recovery time trr .
0.27+0.05 –0.02 1 1.00±0.05 1.40±0.05
0.12+0.05 –0.02
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current
*
0.60±0.05 5°
VR VRRM IF(AV) IFM IFSM Tj Tstg
30 30 100 200 1 125 −55 to +125
V
0 to 0.