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Variable Capacitance Diodes
MA27V17
Silicon epitaxial planar type
For VCO ■ Features
• Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD
1 0.60±0.05 0.27+0.05 –0.02 2 0.10+0.05 –0.02
Unit: mm
1.00±0.05
1.40±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C
5˚
0.15 min.
5˚
0 to 0.01
°C
1 : Anode 2 : Cathode SSSMini2-F1 Package
Marking Symbol: L
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance
*
Conditions VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 4 V, f = 470 MHz
Min
Typ
Max 10
2.86 1.17 2.
MA27V17 Datasheet
