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MA2SD25 - Schottky Barrier Diodes

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  • 1 Publication date: August 2001 SKH00029AED 1 MA2SD25 IF  V F 103 Ta = 125°C 102 104 75°C 25°C.
  • 20°C 105 IR  V R 40 35 Ct  VR Ta = 25°C Forward current IF (mA) Reverse current IR (µA) Ta = 125°C 103 75°C 10 2 Terminal capacitance Ct (pF) 20 30 25 20 15 10 5 10 1 25°C 10 10.
  • 1 10.
  • 2 1 10.
  • 3 10.
  • 1 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 0 0 5 10 15 20 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) www. DataSheet4.

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Datasheet Details

Part number MA2SD25
Manufacturer Panasonic Semiconductor
File Size 95.47 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2SD25 Datasheet
Additional preview pages of the MA2SD25 datasheet.

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Schottky Barrier Diodes (SBD) MA2SD25 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.03 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 15 15 300 200 1 125 −55 to +125 Unit V 5° 2 0.30±0.05 0+0 –0.05 0.01±0.
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