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Switching Diodes
MA5J002E
Silicon epitaxial planar type
For high speed switching circuits ■ Features
• Includes 4 elements of cathode common connection • Parts reduction is possible • Ideal for surge voltage absorption
5˚ 1 2 2.0±0.1 (0.65) (0.65) 5 4
1.25±0.1 2.1±0.1
Unit: mm
0.7±0.1
3 0.2±0.05
5˚
0.16+0.1 –0.06
■ Absolute Maximum Ratings Ta = 25°C
www.DataSheet4U.com Parameter Reverse voltage Maximum peak reverse voltage Forward current
*1 *1
Symbol VR VRM IF IFM IFSM Tj Topr Tstg
Rating 80 80 100 225 500 150 −25 to +105 −55 to +150
Unit
(0.15)
V V mA mA mA °C °C °C
1: Anode 1 2: Cathode 1, 2, 3, 4
0 to 0.
MA5J002E Datasheet
