MA6J784 - Silicon epitaxial planar type

Features

s.
IF(AV) = 100 mA rectification is possible.
Optimum for high frequency rectification because of its short reverse recovery time (trr).
Low forward voltage VF and good rectification efficiency 1 2 3 0.2±0.05 5˚ 2.0±0.1 (0.65)(0.65) 6 5 4 Unit: mm 0.7±0.1 1.25±0.1 2.1±0.1 5˚ 0.16+0.10.
0.06 0 to 0.1 (0.425).
Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Average forward current.
2 Peak forward curren.

Panasonic Semiconductor

Datasheet Details

Part number	MA6J784
Manufacturer	Panasonic Semiconductor
File Size	96.63 KB
Description	Silicon epitaxial planar type
Datasheet	MA6J784 Datasheet
Additional preview pages of the MA6J784 datasheet.

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www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA6J784 Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • IF(AV) = 100 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Low forward voltage VF and good rectification efficiency 1 2 3 0.2±0.05 5˚ 2.0±0.1 (0.65)(0.65) 6 5 4 Unit: mm 0.7±0.1 1.25±0.1 2.1±0.1 5˚ 0.16+0.10 –0.06 0 to 0.1 (0.

Published: Dec 6, 2006 |