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MAS3132E - Switching Diodes

Key Features

  • s.
  • Two elements are contained in one package, allowing highdensity mounting.
  • Short reverse recovery time trr.
  • Small terminal capacitance Ct 0.33+0.05.
  • 0.02 3 0.10+0.05.
  • 0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0 to 0.01 Parameter Reverse voltage Maximum peak reverse voltage Forward current Single Double Peak forward current Single Double Non-repetitive peak forward surge current.
  • Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 150 225 34.

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Other Datasheets by Panasonic

Part Number Description
MAS3795 Silicon epitaxial planar type

Full PDF Text Transcription (Reference)

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Switching Diodes MAS3132E Silicon epitaxial planar type Unit: mm For high-speed switching circuits ■ Features • Two elements are contained in one package, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance Ct 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0 to 0.01 Parameter Reverse voltage Maximum peak reverse voltage Forward current Single Double Peak forward current Single Double Non-repetitive peak forward surge current * Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 150 225 340 500 750 150 −55 to +150 Unit V V mA 0.52±0.03 ■ Absolute Maximum Ratings Ta = 25°C 0.15 min. 0.23+0.05 –0.