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MAZMxxxH - ESD Diodes

Key Features

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  • Four elements anode-common type.
  • Power dissipation PD : 150 mW 1 2 3 5° 0.10±0.03 0.20±0.05 Power dissipation.
  • PD Tj Tstg 150 150.
  • 55 to +150 mW °C °C Junction temperature Storage temperature Note).
  • : PD = 150 mW achieved with a printed circuit board. 1 : Cathode 1 4 : Cathode 3 2 : Anode 1, 2, 3, 4 5 : Cathode 4 3 : Cathode 2 SSMini5-F1 Package Internally connected circuit 5 4 1 0 ∼ 0.01 Parameter Symbol Rating Unit 2 3.
  • Common Electri.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESD Diodes MAZMxxxH Series Silicon planar type 1.60±0.05 Unit: mm 0.55±0.05 For surge absorption circuit 1.60±0.05 1.20±0.05 1.00±0.05 5 4 1.20±0.05 1.60±0.05 ■ Features • Four elements anode-common type • Power dissipation PD : 150 mW 1 2 3 5° 0.10±0.03 0.20±0.05 Power dissipation * PD Tj Tstg 150 150 −55 to +150 mW °C °C Junction temperature Storage temperature Note) *: PD = 150 mW achieved with a printed circuit board. 1 : Cathode 1 4 : Cathode 3 2 : Anode 1, 2, 3, 4 5 : Cathode 4 3 : Cathode 2 SSMini5-F1 Package Internally connected circuit 5 4 1 0 ∼ 0.01 Parameter Symbol Rating Unit 2 3 ■ Common Electrical Characteristics Ta = 25°C ± 3°C Parameter www.DataSheet4U.