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MN101C49G, MN101C49H, MN101C49K
Type Internal ROM type ROM (byte) RAM (byte) Package (Lead-free) 128K 4K MN101C49G MN101C49H Mask ROM 160K 6K MN101C49K MN101CF49K FLASH 224K 10K MN101CP49K EPROM
Minimum Instruction Execution Time
LQFP100-P-1414, QFP100-P-1818B [Standard] 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 125 µs (at 2.0 V to 5.5 V, 32 kHz)* [Double speed] 0.12 µs (at 4.5 V to 5.5 V, 8.39 MHz) 0.25 µs (at 3.0 V to 5.5 V, 4 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V. * The lower limit for operation guarantee for flash memory built-in type is 4.5 V.
MN101CP49H Datasheet
