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MN101C66D, MN101C66G
Type Internal ROM type ROM (byte) RAM (byte) Package (Lead-free) 64K 2K MN101C66D Mask ROM 128K MN101C66G MN101CF66G FLASH MN101CP66D EPROM 64K 4K 2K LQFP080-P-1414A LQFP080-P-1414A, (ES (Engineering Sample) available), LQFP080-P-1414A, QFP084-P-1818E QFP084-P-1818E QFP084-P-1818E 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)* * The lower limit for operation guarantee for flash memory built-in type is 2.5 V. * The lower limit for operation guarantee for EPROM built-in type is 2.3 V.
MN101CP66G Datasheet
