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PNA1605F - Silicon planar type

Key Features

  • 3-0.45±0.2 0.45±0.2.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-emitter voltage (Base open) Collector-base voltage (Emitter open) Emitter-collector voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Rating 20 30 5 5 10 100.
  • 25 to +85.
  • 30 to +100 Unit V V V V mA mW °C °C 1.27 1.27 1 2 3 1: Emitter 2: Collector 3:.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Phototransistors PNA1605F (PN116) Silicon planar type Unit: mm For optical control systems 1.5±0.2 4.5±0.15 3.5±0.15 Not soldered 2.0 2.1±0.15 1.6±0.15 0.8±0.1 12.5 min. 10 min. • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 70° (typ.) • Fast response: tr , tf = 8 µs (typ.) • Side-view type package 3.9±0.25 ■ Features (2.4) 3-0.45±0.2 0.45±0.