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PNZ102F - Silicon NPN Phototransistors

Key Features

  • Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ. ) Fast response : tr, tf = 3 µs (typ. ) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max. Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Oper.

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Datasheet Details

Part number PNZ102F
Manufacturer Panasonic
File Size 50.15 KB
Description Silicon NPN Phototransistors
Datasheet download datasheet PNZ102F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors PNA1401LF Unit : mm ø4.6±0.15 Glass window For optical control systems Features Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) ø5.75 max.