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PU3117 - (PUA3117) Silicon NPN triple diffusion planar type

This page provides the datasheet information for the PU3117, a member of the PU3117-1 (PUA3117) Silicon NPN triple diffusion planar type family.

Datasheet Summary

Features

  • High forward current transfer ratio hFE.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • NPN 3 elements 9.5±0.2 1.65±0.2 8.0±0.2 0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector pow.

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Datasheet preview – PU3117

Datasheet Details

Part number PU3117
Manufacturer Panasonic Semiconductor
File Size 89.20 KB
Description (PUA3117) Silicon NPN triple diffusion planar type
Datasheet download datasheet PU3117 Datasheet
Additional preview pages of the PU3117 datasheet.

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Full PDF Text Transcription

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Power Transistor Arrays PUA3117 (PU3117) Silicon NPN triple diffusion planar type For power amplification and switching 20.2±0.3 Unit: mm 4.0±0.2 ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • NPN 3 elements 9.5±0.2 1.65±0.2 8.0±0.2 0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 3 6 1 15 2.
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