PUB4702 - Silicon N-Channel Power F-MOS FET

Datasheet Summary

Features

q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q Incorporating built-in zener diodes 1.65±0.2 9.5±0.2 unit: mm 25.3±0.2 4.0±0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 4.4±0.5 8.0 s.

Panasonic Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	PUB4702
Manufacturer	Panasonic Semiconductor
File Size	34.28 KB
Description	Silicon N-Channel Power F-MOS FET
Datasheet	PUB4702 Datasheet
Additional preview pages of the PUB4702 datasheet.

📁 Similar Datasheet

PUB4110 - (PUB4110 / PUB4410) Composite Device - Power Transistor Arrays (Panasonic)
PUB4301 - Silicon NPN / PNP epitaxial planar type Power transistor (Panasonic)
PUB4410 - (PUB4110 / PUB4410) Composite Device - Power Transistor Arrays (Panasonic)

Other Datasheets by Panasonic Semiconductor

PUB4701 - Silicon N-Channel Power F-MOS FET

Full PDF Text Transcription

Click to expand full text

Power Transistor Arrays (F-MOS FETs) PUB4702 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q Incorporating built-in zener diodes 1.65±0.2 9.5±0.2 unit: mm 25.3±0.2 4.0±0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 4.4±0.5 8.0 s Applications 0.5±0.15 1.0±0.25 2.54±0.2 9!2.54=22.86±0.25 0.8±0.25 0.5±0.15 C1.5±0.5 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 35 ± 10 ±15 ±1 ±2 2.5 15 3.

Published: Apr 16, 2005 |